报告题目(中文)：氮化铝单晶生长工艺从原子到宏观尺度的模拟仿真研究
报告题目(英文)：Growth of AlN: from atomic scale to macro scale modeling and simulation
报告内容简介：As a typical kind of 3rd generation semiconductor material, AlN is an excellent candidate for high-temperature, high-frequency, high-power electronic, and deep-UV optoelectronic devices. The Physical Vapor Transport method (PVT) has been shown to be the only promising growth technique for high-quality and large-size bulk AlN crystals. However, it’s extremely challenging to grow high quality and large size AlN crystals. In this talk, we will focus our topics on the numerical investigation of AlN crystal growth by PVT based on atomic and macro scale modeling and simulation, and the polytype, growth shape and dislocation density control will also be addressed.
报告人姓名：Prof. Koichi Kakimoto
报告人简介(中文)：Koichi KAKIMOTO 教授是现任国际晶体生长学会主席、日本晶体生长主席、日本九州大学应用力学研究所院教授。KAKIMOTO 教授是全球晶体生长及其数值模拟仿真领域最著名的学者之一，在全球晶体生长及其数值模拟领域享有崇高声望，同时在日本政府、科技界及日本半导体产业界极具影响力。KAKIMOTO教授本人及其领导的研究团队在国际晶体生长领域获得的奖项超过20项。
报告人单位(中文)：日本九州大学、世界晶体生长学会
报告人单位(英文)：Kyushu University, International Organization for Crystl Growth
报告时间：2018-06-15 10:00
报告地点：上海大学宝山校区东区材料学院B楼520报告厅
主办单位：上海大学材料学院、上海大学国际事务处
联系人：吴亮
联系方式：18516773360